CHA7062-QCB 13-20GHz High Power Amplifier GaN Monolithic Microwave IC in SMD leadless package
●The CHA7062-QCB is a two stages monolithic GaN Power Amplifier exhibiting 5W saturated output power over 13-20GHz frequency range.
●It features 17% power added efficiency and a linear gain of more than 18dB.
●The circuit is realized on 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) technology.
●It is designed for Point To Point Radio and VSAT applications and is provided on low cost SMD RoHS compliant plastic package.
■Main Features
●RF bandwidth: 13-20GHz
●Gain: 18dB
●Psat: 37dBm
●PAE: 17% @37dBm average Pout
●DC bias: Vd = 20Volt @ Idq = 216mA
●28 leads QFN 5x5mm²
●MSL3
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High Power Amplifier 、 two stages monolithic GaN Power Amplifier |
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Datasheet |
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Please see the document for details |
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SMD;QFN |
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English Chinese Chinese and English Japanese |
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07 Sep 22 |
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DSCHA7062-QCB2250 |
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1.6 MB |
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