CHA7062-QCB 13-20GHz High Power Amplifier GaN Monolithic Microwave IC in SMD leadless package
●Description:
■The CHA7062-QCB is a two stages monolithic GaN Power Amplifier exhibiting 5W saturated output power over 13-20GHz frequency range. It features 17% power added efficiency and a linear gain of more than 18dB. The circuit is realized on 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC) technology. It is designed for Point To Point Radio and VSAT applications and is provided on low cost SMD RoHS compliant plastic package.
●Main Features:
■ RF bandwidth: 13-20GHz
■ Gain: 18dB
■ Psat: 37dBm
■ PAE: 17% @37dBm average Pout
■ DC bias: Vd = 20Volt @ Idq = 216mA
■ 28 leads QFN 5x5mm²
■ MSL3
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13-20GHz High Power Amplifier 、 two stages monolithic GaN Power Amplifier 、 GaN Monolithic Microwave IC |
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Datasheet |
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Please see the document for details |
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QFN;SMD |
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English Chinese Chinese and English Japanese |
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07 Sep 22 |
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DSCHA7062-QCB2250 |
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1.7 MB |
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