Netsol STT-MRAM Introduction: New Evolution of Technology and Solution
■Non-volatile Random Access Memory
▲Working like SRAM → High speed, High endurance, One byte access
▲Storing like ROM/Flash → Non-volatile, Long retention time
■Architecture of STT-MRAM
▲Adding "MTJ" (Magnetic Tunnel Junction) layers on top of CMOS Fab process
▲Magnetic moment of the Free Layer is induced by the current(i).; It is fixed even after the current(i) is removed.
▲If the magnetic moment of the Free Layer is parallel with the Fixed Layer's, then resistance is small → Logic "0".
▲If the magnetic moment of the Free Layer is opposite with the Fixed Layer's, then resistance is large → Logic "1"
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[ Industrial Applications ][ Automotive Applications ][ Avionics Applications ][ Space Applications ][ IoT System ][ Mission Critical System ][ Medical Systems ][ Enterprise Data Storage ][ Rich Embedded Application ][ Smart Meter ][ Multi Functional Printer ][ PLC ][ Network Router ][ Industrial PC ][ Data Center ][ Enterprise SSD ][ Pachinko ][ Smart Watch ][ Event Data Recorder ][ Tire Pressure Monitoring System ][ Battery Management System ][ Navigation ][ Elevator ][ Drone ][ Vending Machine ][ ATM ][ Solar Power Unit ][ Robotics ] |
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/4/13 |
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3.2 MB |
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