Netsol STT-MRAM Introduction: New Evolution of Technology and Solution

2022-09-26
●What is STT-MRAM?
■Non-volatile Random Access Memory
▲Working like SRAM → High speed, High endurance, One byte access
▲Storing like ROM/Flash → Non-volatile, Long retention time
■Architecture of STT-MRAM
▲Adding "MTJ" (Magnetic Tunnel Junction) layers on top of CMOS Fab process
▲Magnetic moment of the Free Layer is induced by the current(i).; It is fixed even after the current(i) is removed.
▲If the magnetic moment of the Free Layer is parallel with the Fixed Layer's, then resistance is small → Logic "0".
▲If the magnetic moment of the Free Layer is opposite with the Fixed Layer's, then resistance is large → Logic "1"

NETSOL

STT-MRAMMRAMNon-volatile Random Access Memory

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2022/4/13

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