S3R3216V1M S3R3216R1M 32Mb PPI MRAM M-die Parallel Peripheral Interface MRAM 3.3V/1.8V Datasheet
●The device is a Spin-Transfer-Torque Magneto-resistive Random Access Memory (STT-MRAM).
●Data is always non-volatile and the device can replace FRAM, low-power SRAM or nvSRAM with same functionality and help to simplify system design. Due to the non-volatility and virtually unlimited endurance characteristics of STT-MRAM, it is suited for code storage, data logging, backup memory and working memory in industrial designs.
●It is a fully random-access memory with parallel asynchronous interface. And x16 I/O mode allows that lower and upper byte access by data byte control (LB , UB).
●It supports the asynchronous page mode function to enhance the read and write performance. The page size is 4 words.
●The S3R3216(V/R)1M is packaged in industrial standard 54TSOP2 and 48FBGA. These packages are compatible with similar low-power volatile and non-volatile products.
●The device is offered with industrial (-40°C to 85°C) operating temperature range.
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S3R3216V1M 、 S3R3216R1M 、 S3R3216x1M 、 S3Axxxxxxx-xxxxxxx 、 S3R3216V1M-PI70 、 S3R3216V1M-PI70T 、 S3R3216V1M-XI70 、 S3R3216V1M-XI70T 、 S3R3216R1M-PI70 、 S3R3216R1M-PI70T 、 S3R3216R1M-XI70 、 S3R3216R1M-XI70T |
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PPI MRAM 、 Parallel Peripheral Interface MRAM 、 Spin-Transfer-Torque Magneto-resistive Random Access Memory 、 STT-MRAM |
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Datasheet |
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Please see the document for details |
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48FBGA;54TSOP2;FBGA;TSOP2 |
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English Chinese Chinese and English Japanese |
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Jul. 2023 |
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Rev. 1.0 |
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2.4 MB |
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