3.3V Parallel Peripheral Interface MRAM 1Mb ~ 16Mb PPI MRAM M-die

2023-06-12
●General Description
■The device is a Spin-Transfer-Torque Magneto-resistive Random Access Memory (STT-MRAM).
■Data is always non-volatile and the device can replace FRAM, low power SRAM or nvSRAM with same functionality and help to simplify system design. Due to the non volatility and virtually unlimited endurance characteristics of STT-MRAM, it is suited for code storage, data logging, backup memory and working memory in industrial designs.
■It is offered in density ranging from 1Mbit to 16Mbit. It is a fully random-access memory with parallel asynchronous interface. x16 or x8 I/O mode are supported. And x16 I/O mode allows that lower and upper byte access by data byte control (LB̅̅̅ , UB̅̅̅̅ ).
■It supports the asynchronous page mode function to enhance the read and write performance. The page size of x16 I/O mode and x8 I/O mode is 4 words and 8 words.
■The S3Rxx16V1M is packaged in industrial standard 44TSOP2, 54TSOP2 and 48FBGA.
■The S3Rxx08V1M is packaged in industrial standard 44TSOP2 and 48FBGA. These packages are compatible with similar low-power volatile and non-volatile products.
■The device is offered with industrial (-40°C to 85°C) operating temperature range.

NETSOL

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Part#

Parallel Peripheral Interface MRAMPPI MRAM M-dieSpin-Transfer-Torque Magneto-resistive Random Access MemorySTT-MRAM

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Datasheet

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44TSOP2;48FBGA;54TSOP2

English Chinese Chinese and English Japanese

Jan. 2023

Rev. 0.1

2.3 MB

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