S3RxxxxR1M 1.8V Parallel Peripheral Interface MRAM 1Mb ~ 16Mb PPI MRAM M-die Datasheet

2023-08-31
●General Description
■The device is a Spin-Transfer-Torque Magneto-resistive Random Access Memory (STT-MRAM).
■Data is always non-volatile and the device can replace FRAM, low-power SRAM or nvSRAM with same functionality and help to simplify system design. Due to the non-volatility and virtually unlimited endurance characteristics of STT-MRAM, it is suited for code storage, data logging, backup memory and working memory in industrial designs.
■It is offered in density ranging from 1Mbit to 16Mbit. It is a fully random-access memory with parallel asynchronous interface. x16 or x8 I/O mode are supported. And x16 I/O mode allows that lower and upper byte access by data byte control (LB , UB ).
■It supports the asynchronous page mode function to enhance the read and write performance. The page size of x16 I/O mode and x8 I/O mode is 4 words and 8 words.
■The S3Rxx16R1M is packaged in industrial standard 44TSOP2, 54TSOP2 and 48FBGA.
■The S3Rxx08R1M is packaged in industrial standard 44TSOP2 and 48FBGA. These packages are compatible with similar low-power volatile and non-volatile products.
■The device is offered with industrial (-40°C to 85°C) operating temperature range.

NETSOL

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Part#

Parallel Peripheral Interface MRAMPPI MRAM M-dieSpin-Transfer-Torque Magneto-resistive Random Access MemorySTT-MRAM

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Datasheet

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44TSOP2;48FBGA;54TSOP2

English Chinese Chinese and English Japanese

Jul. 2023

Rev. 1.0

3.1 MB

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