PTU7N65/PTD7N65 650V N-Channel MOSFET
●Low Intrinsic Capacitances
●Excellent Switching Characteristics
●Extended Safe Operating Area
●Unrivalled Gate Charge : 16 nC (Typ.)
●BVDSS=650V, ID=6.5A
●Lower RDS(on) : 1.5Ω (Max) @VG=10V
●100% Avalanche Tested
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Datasheet |
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Please see the document for details |
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TO‐252;TO‐251 |
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English Chinese Chinese and English Japanese |
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2012-7-8 |
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3.1 MB |
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