15W X Band High Power Amplifier: GaN Monolithic Microwave IC Advanced Information
●UMS develops a two stage High Power Amplifier operating between 7.9 and 11GHz. The CHA8612-QDB typically provides 15W of saturated output power and 37% of Power added Efficiency. The small signal gain exhibits more than 25dB. Moreover, it is proposed in a standard surface mount package. The overall power supply is of 30V/680mA (quiescent current).
●The circuit is designed for a wide range of applications, from military to commercial communication systems.
●It is developed on a robust 0.25μm gate length GaN on SiC HEMT process and will be available in a standard surface mount 46 leads QFN7x7, compliant with the regulation in particular with the directives RoHS N°2011/65 and REACh N°1907/2006.
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15W X Band High Power Amplifier 、 GaN Monolithic Microwave IC 、 two stage High Power Amplifier |
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Datasheet |
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Please see the document for details |
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QFN |
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English Chinese Chinese and English Japanese |
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11 Jul 22 |
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AI2006;AI20062192 |
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3 MB |
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