JXP3407BVRG 30V P-Channel Enhancement Mode MOSFET

PublishTime：2022-08-22

■DESCRIPTION
●The JXP3407BVRG uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications.
■GENERAL FEATURES
●VDS=-30V，ID=-3A
◆RDS(ON)(Typ.)=90mΩ@VGS=-4.5V
◆RDS(ON)(Typ.)=60mΩ@VGS=-10V
●High power and current handing capability
●Lead free product is acquired
●Surface mount package

Brand of Product：	Jingxin Technology
Part#：	JXP3407BVRG More Part#
Product Category：	P-Channel Enhancement Mode MOSFET More
Application：	[ PWM applications ][ Load switch ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-23
Language：	English Chinese Chinese and English Japanese
Date of Creation：	2022/6/8
Version Number：	REV.1.0
Data Encoding：
Data Size：	1015 KB

Download

+1 Like
Add to Favorites

Recommend

Technical Resources

More>

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Integrated Circuits