SX4407B -30V P-Channel Enhancement Mode MOSFET

2025-03-21
SX4407B采用先进的沟槽技术,提供优异的RDS(ON)、低栅极电荷,并且可以在低至4.5V的栅极电压下工作。该器件适用于电池保护或其他开关应用。

SXSEMI

SX4407B

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Part#

MOSFET

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电池保护 ]开关应用 ]

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Datasheet

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SOP-8

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