JXP4963SRG 20V Dual P-Channel Enhancement MOSFET
●The JXP4963SRG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
■GENERAL FEATURES
●VDS=-20V, ID=-6.0A
◆RDS(ON)=40mΩ (typical) @ VGS=-4.5V
◆RDS(ON)=50mΩ (typical) @ VGS=-2.5V
●High density cell design for ultra low Rdson
●Fully characterized avalanche voltage and current
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[ Power switching application ][ Uninterruptible power supply ] |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2022/4/12 |
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REV.1.0 |
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1.2 MB |
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