JXP4884SRG 40V Dual N-Channel Enhancement MOSFET
●The JXP4884SRG uses advanced trench technology to provide excellent RDS(ON)with low gate charge.
●This device is suitable for high side switch in SMPS and general purpose applications.
■GENERAL FEATURES
●VDS=40V, ID =6A
◆RDS(ON)=20mΩ (typical) @ VGS=10V
◆RDS(ON)=24mΩ (typical) @ VGS=4.5V
●Excellent gate charge x RDS(ON)product(FOM)
●Very low on-resistance RDS(ON)
●150 °C operating temperature
●Pb-free lead plating
●100% UIS tested
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[ DC/DC Converter ] |
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Datasheet |
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Please see the document for details |
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SOP-8 |
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English Chinese Chinese and English Japanese |
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2022/1/12 |
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REV.1.0 |
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1.2 MB |
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