JH035N04 Series
■These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
●Features
■Fast switching
■Low on-resistance
■Low aate charae
■100% Sinale Pulse Avalanche Enerav Test
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JH035N04 、 JH035N04F 、 JH035N04D 、 JH035N04E 、 JH035N04M 、 JH035N04N 、 JH035N04 Series |
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Datasheet |
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Please see the document for details |
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T0-220;IT0-220;T0-263;T0-262;T0-252;T0-251 |
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English Chinese Chinese and English Japanese |
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2020/1/10 |
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1.8 MB |
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