GaN TECHNOLOGY:0.15μm GaN HEMT process
●Supported by a thermally dissipative SiC substrate, the power density reaches 4.2W/mm. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections.
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[ Pt to Pt radio ][ 5G ][ Satcom ][ Radar ][ Broadband amplification ][ Hi-Rel products ] |
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/6/14 |
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538 KB |
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