3DF0512M16VS8492 MEMORY MODULE FLASH NOR
■GENERAL DESCRIPTION
●The 3DF0512M16VS8492 is a 3.0 V single power 512 Mbit Flash memory. The memory is organized in 8 banks of 64 Mbit with separate #CE (chip enable) signal controls. Each individual bank is a 4M x 16 bit device.
●The simultaneous read/write operations allows data to be continuously read from one bank while executing erase/ program in any other bank. Plus, there is no latency between read and write operations.
●Hardware data protection measures include a low Vcc detector that automatically inhibits write operations during power transitions. Thanks to power management circuits, the memory can reduce its power consumption to nearly zero during inactive periods.
●All these features enhanced by 3D PLUS technology, make this memory a cost-effective solution for low power and high-capacity data storage needs.
●The module packaged in a SOP 54 is available for Commercial, Industrial or Military temperature range. It is also available with screening options up to space grade level.
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Datasheet |
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Please see the document for details |
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SOP 54 |
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English Chinese Chinese and English Japanese |
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Dec 2020 |
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3DFP-0492-2 |
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884 KB |
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