Vision 2000-C™ and Vision 2000-E™ RGA For CVD And ETCH Processes
■Titanium nitride (from TDMAT)
■Tantalum oxide (from tantalum precursor)
■Copper (from CupraSelect®)
■HDP of low-k dielectric films
■Atomic Layer Chemical Vapor Deposition (ALCVD) & atomic layer epitaxy
■Metal-Organic Chemical Vapor Deposition (MOCVD)
■Tungsten and tungsten silicide
■Reactive ion etching (RIE)
■Plasma etching
▲Metal
▲Oxide
▲Poly
■High density plasma etching
■Microwave etching
●Product Features
■Application-specific RGA designed for continuous in situ monitoring of chemical vapor deposition(CVD) and etching processes
▲In situ monitoring during chamber clean, passivation and deposition to detect subtle changes in low concentration species and high mass species decay with respect to time
▲Ideal for qualification of new CVD or Etch process tools or process sequences
▲Enables precision end-point characterization and process optimization
▲Provides insight into etch rate variations
▲Decreases time to production and time to ramp
■Baseline monitoring of CVD or Etch chambers for air leaks and background contamination levels
■Includes Process Eye™ Professional software for
▲Data acquisition
▲Data interpretation and data recall
▲Intelligent alarming of process excursions
●Key Benefits
■Vacuum troubleshooting for fast PM recovery
■Can be integrated with a wide variety of CVD and Etch tools
■Remote Vacuum Controller (RVC) for fail-safe vacuum operation
■PC-based operation and control
[ etch ][ chamber clean ][ passivation processes ][ deposition steps ][ CVD processes ] |
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Please see the document for details |
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