2SD2118 Low V-CE(sat) Transistor
■Low V-CE(sat).
■Excellent DC current gain characteristics.
■NPN silicon transistor.
|
|
Datasheet |
|
|
|
Please see the document for details |
|
|
|
|
|
TO-252 |
|
English Chinese Chinese and English Japanese |
|
2020/2/24 |
|
|
|
|
|
40 KB |
- +1 Like
- Add to Favorites
Recommend
- With 1000 Domestic and Oversea Brands, Sekorm Solves the Difficulty of Engineer Selection
- IGBT BLQG50T65FCKA, is Characteristic with Low VCE(sat), Having Fast recovery anti-parallel diode
- 650V/50A IGBT BLG50T65FDLA which is Characteristic with Low VCE(sat), Optimized Switching Performance and Low Gate Charge Qg
- SanRex GSA Series of SOT-227 Packaged IGBT Modules By Offering A Low Vce(sat) Type and A High-speed Switching Type
- High speed Trench Fieldstop IGBT MSG25T120FL with a Low VCE(sat) and High Switching Performance is Used for Welding
- High speed Trench Fieldstop IGBT MSG40T120FL, Providing Low VCE(sat), High Switching Performance and Excellent Quality
- High Speed Trench Fieldstop IGBT MSG40T120FH/FHW which Provides Low VCE(sat) and High Switching Performance
- 650V/50A IGBT BLG50T65FLA with Positive Temperature Coefficient, Optimized Switching Performance and Low Gate Charge Qg
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.