EPC2302 – Enhancement Mode Power Transistor Data Sheet
The thermal resistance to case top is ~0.2 °C/W, resulting in excellent thermal behavior and easy cooling. The device features an enhanced PQFN“Thermal-Max”package. The exposed top enhances top-side thermal management and the side-wettable flanks guarantee that the complete side-pad surface is wetted with solder during the reflow soldering process, which protects the copper and allows soldering to occur on this external flank area for easy optical inspection.
Compared to a Si MOSFET, the footprint of 15 mm2 is less than half of the size of the best-in-class Si MOSFET with similar Rds(on) and voltage rating, QG and QGD are significantly smaller and QRR is 0.This results in lower switching losses and lower gate driver losses. Moreover, EPC2302 is very fast and can operate with deadtime less than 10 ns for higher efficiency and QRR = 0 is a big advantage for reliability and EMI. In summary, EPC2302 allows the highest power density due to enhanced efficiency, smaller size, and higher switching frequency for smaller inductor and fewer capacitors.
The EPC2302 enables designers to improve efficiency and save space. The excellent thermal behavior enables easier and lower cost cooling. The ultra-low capacitance and zero reverse recovery of the eGaN® FET enables efficient operation in many topologies. Performance is further enhanced due to the small, low inductance footprint.
[ AC-DC chargers ][ SMPS ][ adaptors ][ power supplies ][ High Frequency DC-DC Conversion up to 80 V input (Buck ][ Boost ][ Buck-Boost ][ LLC) ][ 24 V–60 V Motor Drives ][ High Power Density DC-DC modules from 40 V– 60 V to 5 V–12 V ][ Synchronous Rectification ][ Solar MPP ] |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2022/2/4 |
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1.4 MB |
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