EC2612 RoHS COMPLIANT 40GHz Super Low Noise pHEMT Pseudomorphic High Electron Mobility Transistor
pseudomorphic high electron mobility
transistor (0.15µm pHEMT) technology.
Gate width is 120µm and the 0.15µm
T-shaped aluminium gate features low
resistance and excellent reliability.
The device shows a very high
transconductance which leads to very high
frequency and low noise performances.
It is available in chip form with sources via
holes connection.Only gate and drain wires
bounding are required.
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40GHz Super Low Noise pHEMT（Pseudomorphic High Electron Mobility Transistor ） |
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Datasheet |
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ESD 、 RoHS |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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17-Mar-00 |
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DSEC26120077 |
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296 KB |
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