EC2612-99F 40GHz SuperLow Noise pHEMT Pseudomorphic High Electron Mobility Transistor data sheet
The EC2612-99F is based on a 0.15μm gate pseudomorphic high electron mobility transistor (0.15μm pHEMT) technology.Gate width is 120 μm and the 0.15μm T-shaped aluminium gate features low resistance and excellent reliability.The device shows a very high transconductance which leads to very high frequency and low noise performances.It is available in chip form with sources via holes connection. Only gate and drain wires bounding are required.
●Main Features
■0.8dB minimum noise figure @ 18GHz
■1.5dB minimum noise figure @ 40GHz
■12dB associated gain @ 18GHz
■9.5dB associated gain @ 40GHz
■Chip size: 0.63 x 0.37 x 0.1 mm
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Pseudomorphic High Electron Mobility Transistor 、 SuperLow Noise pHEMT |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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30 Nov 21 |
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DSEC26121301 |
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1.2 MB |
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