2N7000, 2N7002,NDS7002A N-Channel Enhancement Mode Field Effect Transistor
●These N−channel enhancement mode field effect transistors areproduced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A. These products are particularly suited for low−voltage, low−current applications, suchas small servo motor control, power MOSFET gate drivers, and other switching applications.
■Features
●High Density Cell Design for Low RDS(on)
●Voltage Controlled Small Signal Switch
●Rugged and Reliable
●High Saturation Current Capability
●Pb−Free and Halogen Free
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2N7000 、 2N7002 、 NDS7002A 、 2N7000-D74Z 、 2N7000-D75Z 、 2N7000-D26Z |
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Datasheet |
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Please see the document for details |
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TO−92;SOT−23 |
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English Chinese Chinese and English Japanese |
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2021/8/6 |
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Rev. 5 |
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NDS7002A/D |
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283 KB |
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