2N7000, 2N7002,NDS7002A N-Channel Enhancement Mode Field Effect Transistor

2021-07-20
These N−channel enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density,DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mAdc and can deliver pulsed currents up to 2 A.These products are particularly suited for low−voltage, low−current applications, such as small servo motor control, power MOSFET gate drivers, and other switching applications.
■Features
●High Density Cell Design for Low R-DS(on)
●Voltage Controlled Small Signal Switch
●Rugged and Reliable
●High Saturation Current Capability
●This Device is Pb−Free and Halogen Free

ON Semiconductor

2N70002N7002NDS7002A2N7000−D74Z2N7000−D75Z2N7000−D26Z

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Part#

Effect Transistor

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Motor Control ]Gate Drivers ]

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Datasheet

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Please see the document for details

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SOT−23;TO−92;TO−236

English Chinese Chinese and English Japanese

6/2021

Rev.4

NDS7002A/D

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