Preventing GaN Device VHF Oscillation

2021-12-08
■Parasitic oscillation
●Parasitic oscillation can occur in any switching circuit with fast-changing voltage and current that stimulate a parasitic LC network
●The oscillation becomes sustained when positive feedback with gain is present
◆The feedback could be through parasitic capacitance, parasitic inductance, shared or coupling inductance, etc.
◆Together with the device gain in the linear region, creates an oscillator
●Preventing oscillation in fast-switching GaN devices is more challenging than in silicon due to
◆Faster dv/dt and di/dt
◆Higher transconductance
●Violent sustained VHF oscillation (50-200MHz) will cause destruction
■Sustained oscillation
●In a half-bridge circuit with high speed devices on both the high and low side, there are three steps that yield sustained oscillation on the high-side device during low-side device turn-on, and vice versa

Transphorm

TPH3208LDTPH3208LDGTPH3208LSTPJ3212PS

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Part#

GaN Device

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Supplier and Product Introduction

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Please see the document for details

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PQFN;TO247

English Chinese Chinese and English Japanese

4/4/2017

5.8 MB

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