650 V GaN in Conduction Cooled Power Supplies
■Prototypes built using Silicon MOSFETs did not meet challenges with heat dissipation and component temperatures under peak load conditions. This led Marotta to replace the MOSFETs with Transphorm’s TPH3208LD PQFN GaN devices.
■The power system’s topology features hard switching with automatic transformer RESET where transistor voltage stresses are clamped to the input voltage. The GaN devices significantly reduced losses in a simpler thermal design and packaging concept.
■Transphorm GaN benefits:
●Conduction-cooled [fanless]2x frequency increase
●“Dramatic” power efficiency increase
●Smaller system size
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Please see the document for details |
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PQFN |
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English Chinese Chinese and English Japanese |
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2021/08/26 |
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582 KB |
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