GS1200BTP-EVB High-Efficiency 1.2 kW GaN Based Bridgeless Totem-Pole PFC
■This application note highlights the performance, benefits, and design considerations of a 1.2 kW Bridgeless Totem Pole PFC (BTP PFC) solution controlled by advanced digital control methods coupled with 650 V GaN enhancement mode HEMTs (E-HEMT). This fan-less design solution achieves 80 PLUS® Titanium standards for data centers and computing applications. It has high power density, reliable start-up, high efficiency, reduced heat sinking, low THD and low EMI. The topology is bi-directional and can be easily scaled (~10 kW). This design can be incorporated as a front-end of AC/DC converters for EV on-board chargers and industrial power supply applications
■The latest generation Solantro® SA4041 32-bit, 50 MHz digital power processor facilitates solutions which leverage the performance benefits of GaN Systems'650 V E-HEMT family. The SA4041 integrates high-speed analog peripherals, hardware accelerators and an event driven timing engine with a 50 MHz micro-processor. This design implements hysteretic current controlwith adaptive dead-time control and automatic transition between hard and soft-switched operation (ZVS) to provide maximum efficiency with GaN E-HEMTs over a wide operating range. The SA4041 integrated hardware accelerators and event timing engine allow the current control loop to be implemented in hardware and allow CPU resources to be utilized for low frequency bulk voltage control, housekeeping and communications functionality. In this reference design, Solantrons' SA4041 uses less than 50% of its available interrupt bandwidth including all control, household, and protection features.
■GaN Systems'GS66508B 650 V E-HEMTs are implemented in this design with patented Island Technology® cell layout for reduction of the device size and cost, while delivering substantially higher current and better performance than other GaN devices. GaNPX® packaging enables low inductance and thermal resistance in a small package. The GS66508B is a bottom-side cooled transistor that is easy todrive. It has exceptionally low total gate charge, Q-G, and output capacitance, C-oss, resulting in low switching losses and therefore providing very high efficiency.
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2020/5/25 |
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Rev 200525 |
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7 MB |
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