AH8113 HALL SWITCH: LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH
■The AH8113is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V.
■Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some μA.
■The IC switching behavior is Omnipolar; it can be switched on with either the North or South pole of a magnet.
■The AH8113is available in TSOT-23and TO-92S packages.
●FEATURES
■Micro power design
■1.65V to 5.5 V battery operation
■High sensitivity and high stability of the magnetic switching points
■High resistance to mechanical stress
■Digital output signal
■Switching for both poles of a magnet (omnipolar)
■Not suitable for automotive application
■Available in TSOT-23andTO-92Spackages
●APPLICATION
■Cover switch in clam-shell cellular phones
■Cover switch in Notebook PC/PDA
■Contact-less switch in consumer products
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AH8113 、 AH8113TE3R 、 AH8113TE3VR 、 AH8113ZSB 、 AH8113ZSVB |
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LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH 、 integrated hall-effect sensor 、 HALL SWITCH |
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[ clam-shell cellular phones ][ Notebook PC ][ PDA ][ consumer products ] |
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Datasheet |
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Please see the document for details |
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TSOT-23;TO-92S |
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English Chinese Chinese and English Japanese |
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JUL 2020 |
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REV1.5 |
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745 KB |
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