AiT Semiconductor Inc.
www.ait-ic.com
AH8113
HALL SWITH
LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH
REV1.5 - AUG 2011 RELEASED, JUL 2020 UPDATED - - 1 -
DESCRIPTION
FEATURES
The AH8113 is an integrated hall-effect sensor
designed specifically to meet the requirements of
low-power devices. e.g. as an On/Off switch in
Cellular Flip-Phones, with battery operating voltages
of 1.65V-5.5V.
Precise magnetic switching points and high
temperature stability are achieved through the unique
design of the internal circuit. An onboard clock
scheme is used to reduce the average operating
current of the IC. During the operate phase the IC
compares the actual magnetic field detected with the
internally compensated switching points. The output
Voltage is switched at the end of each operating
phase. During the Stand-by phase the output stage is
latched and the current consumption of the device
reduced to some μA.
The IC switching behavior is Omnipolar; it can be
switched on with either the North or South pole of a
magnet.
The AH8113 is available in TSOT-23 and TO-92S
packages.
âš« Micro power design
âš« 1.65 V to 5.5 V battery operation
âš« High sensitivity and high stability of the
magnetic switching points
âš« High resistance to mechanical stress
âš« Digital output signal
âš« Switching for both poles of a magnet
(omnipolar)
âš« Not suitable for automotive application
��� Available in TSOT-23 and TO-92S packages
APPLICATION
âš« Cover switch in clam-shell cellular phones
âš« Cover switch in Notebook PC/PDA
âš« Contact-less switch in consumer products
TYPICAL APPLICATION
ORDERING INFORMATION
Package Type
Part Number
TSOT-23
SPQ: 4,000pcs/Reel
TE3
AH8113TE3R
AH8113TE3VR
TO-92S
SPQ: 1,000pcs/Bag
ZS
AH8113ZSB
AH8113ZSVB
Note
V: Halogen free Package
R: Tape & Reel
B: Bulk Packing
AiT provides all RoHS products
