AH8113 HALL SWITH LOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

2020-10-20
The AH8113 is an integrated hall-effect sensor designed specifically to meet the requirements of low-power devices. e.g. as an On/Off switch in Cellular Flip-Phones, with battery operating voltages of 1.65V-5.5V. Precise magnetic switching points and high temperature stability are achieved through the unique design of the internal circuit. An onboard clock scheme is used to reduce the average operating current of the IC. During the operate phase the IC compares the actual magnetic field detected with the internally compensated switching points. The output Voltage is switched at the end of each operating phase. During the Stand-by phase the output stage is latched and the current consumption of the device reduced to some μA.
The IC switching behavior is Omnipolar;it can be switched on with either the North or South pole of a magnet.
The AH8113 is available in TSOT-23 and TO-92S packages.
FEATURES:
●Micro power design
●1.65V to 5.5 V battery operation
●High sensitivity and high stability of themagnetic switching points
●High resistance to mechanical stress
●Digital output signal
●Switching for both poles of a magnet(omnipolar)
●Not suitable for automotive application
●Available in TSOT-23 and TO-92S packages

AiT

AH8113AH8113TE3RAH8113TE3VRAH8113ZSWAH8113ZSVW

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Part#

HALL SWITHintegrated hall-effect sensorLOW POWER, HIGH SENSITIVITY, CMOS HALL SWITCH

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Cover switch in clam-shell cellular phones ]Cover switch in Notebook PC ]Cover switch in Notebook PDA ]Contact-less switch in consumer products ]

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Datasheet

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Please see the document for details

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TSOT-23;TO-92S

English Chinese Chinese and English Japanese

JUL 2020

REV1.5

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