Evolution of Wide-Bandgap Semiconductors for Power Devices Expanding Fields of Application Technical Review

PublishTime：2021-07-02

●Wide-bandgap semiconductors including silicon carbide (SiC) and gallium nitride (GaN) are currently attracting attention for use in next-generation power devices in view of their excellent characteristics offering higher energy efficiency.
●In developing key technologies to improve the performance of SiC power devices, Toshiba Electronic Devices & Storage Corporation has focused on the reduction of wafer thickness and cell miniaturization, and has been continuously releasing a wide variety of SiC power devices. The application of SiC hybrid modules to traction inverters for rolling stock, for example, is contributing to reductions in the size and weight of such inverters. We are also developing GaN power devices capable of performing high-speed switching operations, including a quasi-normally-off GaN high-electron-mobility transistor (HEMT) and a GaN metal-oxide-semiconductor field-effect transistor (MOSFET).
●Introduction
■Power devices have achieved high efficiencies in recent decades because of improvement in the performance of power semiconductors, which are made of silicon (Si). However, Si power devices are approaching their theoretical limits of performance, and wide-bandgap semiconductors are expected to break through these limits.
■In 2013, Toshiba Electronic Devices & Storage Corporation developed Schottky barrier diodes (SBD) made from silicon carbide (SiC), which is a wide-bandgap semiconductor. In 2014, we announced the launch of a SiC hybrid module, a device that assembles silicon injection-enhanced gate transistors (IEGTs) and SiC SBDs in a single integrated package. By developing SiC hybrid modules and applying them to inverters for electric railways, improved power conversion efficiencies and space savings are achieved(1). Another promising wide-bandgap semiconductor, gallium nitride (GaN), excels in high-speed switching performance, leading the way toward more efficient solutions and miniaturization of power supply equipment.
■Here, we describe the latest advances associated with these two new semiconductor materials and their future trends.

Brand of Product：	TOSHIBA
Part#：
Product Category：	Power Devices More
Application：	More
Data Type：	Supplier and Product Introduction More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
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Language：	English Chinese Chinese and English Japanese
Date of Creation：	2020/04/05
Version Number：	Vol.4
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Data Size：	744 KB

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