CPC3708 350V N-Channel Depletion Mode FET

PublishTime：2021-04-30

The CPC3708 is a N-channel, depletion mode Field Effect Transistor (FET) that is available in an SOT-223 package (CPC3708Z) and an SOT-89 package (CPC3708C). Both utilize IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process that realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly for use in difficult application environments such as telecommunications, security, and power supplies.
CPC3708Z and the CPC3708C have a typical on-resistance of 8Ω and a drain-to-source voltage of 350V. As with all MOS devices, the FET structure prevents thermal runaway and thermally induced secondary breakdown.
● Features:
■ 350V Drain-to-Source Voltage
■ Depletion Mode Device Offers Low R_DS(on) at Cold Temperatures
■ Low On-Resistance: 8Ω (Typical) @ 25°C
■ Low V_GS(off) Voltage
■ High Input Impedance
■ Low Input and Output Leakage
■ Small Package Size SOT-89 and SOT-223
■ PCB Space and Cost Savings

Brand of Product：	IXYS
Part#：	CPC3708 、 CPC3708Z 、 CPC3708C 、 CPC3708CTR 、 CPC3708ZTR More Part#
Product Category：	Field Effect Transistor 、 FET More
Application：	[ LED Drive Circuits ][ Telecommunications ][ Normally On Switches ][ Ignition Modules ][ Converters ][ Security ][ Power Supplies ][ Regulators ] More
Data Type：	Datasheet More
Safety & Environment Standards：	More
Operating Temperature：	Please see the document for details
Qualification Grade：	More
Qualification Approval：	More
Package：	SOT-89;SOT-223
Language：	English Chinese Chinese and English Japanese
Date of Creation：	4/8/2021
Version Number：
Data Encoding：	DS-CPC3708-R04
Data Size：	669 KB

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