CPC3701 60V, Depletion-Mode, N-Channel Vertical DMOS FET
■Description：
●The CPC3701 is an N-channel, depletion mode, field effect transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third-generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. Our vertical DMOS process yields a robust device, with high input impedance, for use in high-power applications. The CPC3701 is a highly reliable FET device that has been used extensively in our Solid State Relays for industrial and security applications.
●The CPC3701 has a minimum breakdown voltage of 60V, and is available in the SOT-89 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown.
|
Depletion-Mode N-Channel Vertical DMOS FET 、 N-channel depletion mode field effect transistor 、 FET |
|
|
[ Ignition Modules ][ Normally-On Switches ][ Solid State Relays ][ Converters ][ Security ][ Power Supplies ] |
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
4/10/2015 |
|
|
R06 |
|
|
DS-CPC3701-R06 |
|
|
245 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
