Si823Hx Data Sheet
2021-04-21
4.0 A Symmetric Drive ISODrivers with Low Propagation Delayand High Transient Immunity
The Si823Hx combines two isolated gate drivers into a single package for high power applications. The Si823Hx includes devices with single or dual control inputs with in-dependent or high-side/low-side outputs. These drivers can operate with a 3.0 – 5.5 Vinput VDD and a maximum drive supply voltage of 30 V.
The Si823Hx is ideal for driving power MOSFETs and IGBTs used in a wide variety of switched power and motor control applications. These drivers utilize Silicon Labs' proprietary silicon isolation technology, supporting up to 5 kVRMS for 1 minute isolation voltage. This technology enables high CMTI (125 kV/μs), lower propagation delays and skew, little variation with temperature and age, and low part-to-part matching.
The unique architecture of the output stage features a booster device that provides a higher pull up capability at the Miller plateau region of the load power switch to support faster turn-on times. This driver family also offers some unique features such as over-temperature protection, output Undervoltage Lockout (UVLO) fault detection,dead time programmability and fail-safe drivers with default low in case of loss of input side power. The Si823Hx family offers longer service life and dramatically higher reliability compared to opto-coupled gate drivers.
Automotive Grade is available. These products are built using automotive specific flows at all steps in the manufacturing process to ensure the robustness and low defectivity required for automotive applications.
●KEY FEATURES:
■ Single or two isolated drivers in one package
◆ Up to 5 kV-RMS isolation
◆ Up to 1500 V-DC peak driver-to-driver differential voltage
■ EN pin for enhanced safety or DIS pin option
■ PWM and dual driver versions
■ 4.0 A sink/source peak output
■ High electromagnetic immunity
■ 30 ns max propagation delay
■ Transient immunity: >125 kV/μs
■ Programmable dead time: 20 – 200 ns
■ Deglitch option for filtering noise
■ Wide temperature range: –40 to +125 °C
■ RoHS-compliant packages
◆ WB SOIC-14
◆ DFN-14
◆ NB SOIC-8
◆ SSO-8
◆ NB SOIC-16
■ AEC-Q100 qualification
■ Automotive-grade OPNs available
◆ AIAG-compliant PPAP documentation support
◆ IMDS and CAMDS listing support
The Si823Hx combines two isolated gate drivers into a single package for high power applications. The Si823Hx includes devices with single or dual control inputs with in-dependent or high-side/low-side outputs. These drivers can operate with a 3.0 – 5.5 Vinput VDD and a maximum drive supply voltage of 30 V.
The Si823Hx is ideal for driving power MOSFETs and IGBTs used in a wide variety of switched power and motor control applications. These drivers utilize Silicon Labs' proprietary silicon isolation technology, supporting up to 5 kVRMS for 1 minute isolation voltage. This technology enables high CMTI (125 kV/μs), lower propagation delays and skew, little variation with temperature and age, and low part-to-part matching.
The unique architecture of the output stage features a booster device that provides a higher pull up capability at the Miller plateau region of the load power switch to support faster turn-on times. This driver family also offers some unique features such as over-temperature protection, output Undervoltage Lockout (UVLO) fault detection,dead time programmability and fail-safe drivers with default low in case of loss of input side power. The Si823Hx family offers longer service life and dramatically higher reliability compared to opto-coupled gate drivers.
Automotive Grade is available. These products are built using automotive specific flows at all steps in the manufacturing process to ensure the robustness and low defectivity required for automotive applications.
●KEY FEATURES:
■ Single or two isolated drivers in one package
◆ Up to 5 kV-RMS isolation
◆ Up to 1500 V-DC peak driver-to-driver differential voltage
■ EN pin for enhanced safety or DIS pin option
■ PWM and dual driver versions
■ 4.0 A sink/source peak output
■ High electromagnetic immunity
■ 30 ns max propagation delay
■ Transient immunity: >125 kV/μs
■ Programmable dead time: 20 – 200 ns
■ Deglitch option for filtering noise
■ Wide temperature range: –40 to +125 °C
■ RoHS-compliant packages
◆ WB SOIC-14
◆ DFN-14
◆ NB SOIC-8
◆ SSO-8
◆ NB SOIC-16
■ AEC-Q100 qualification
■ Automotive-grade OPNs available
◆ AIAG-compliant PPAP documentation support
◆ IMDS and CAMDS listing support
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