Si823Hx Data Sheet

2020-03-28
The Si823Hx combines two isolated gate drivers into a single package for high power

applications. The Si823Hx includes devices with single or dual control inputs with independent or high-side/low-side outputs. These drivers can operate with a 3.0 – 5.5 V

input VDD and a maximum drive supply voltage of 30 V.

The Si823Hx is ideal for driving power MOSFETs and IGBTs used in a wide variety of

switched power and motor control applications. These drivers utilize Silicon Labs' proprietary silicon isolation technology, supporting up to 5 kVRMS for 1 minute isolation

voltage. This technology enables high CMTI (125 kV/µs), lower propagation delays

and skew, little variation with temperature and age, and low part-to-part matching.

The unique architecture of the output stage features a booster device that provides a

higher pull up capability at the Miller plateau region of the load power switch to support faster turn-on times. This driver family also offers some unique features such as

over-temperature protection, output Undervoltage Lockout (UVLO) fault detection,

dead time programmability and fail-safe drivers with default low in case of loss of input

side power. The Si823Hx family offers longer service life and dramatically higher reliability compared to opto-coupled gate drivers.

Automotive Grade is available for certain part numbers. These products are built using

automotive specific flows at all steps in the manufacturing process to ensure the robustness and low defectivity required for automotive applications.

Silicon Labs

Si823HxSi823H9AC-ISSi823H9BC-ISSi823H9CC-ISSi823H1AB-IS1Si823H1BB-IS1Si823H1CB-IS1Si823H2AB-IS1Si823H2BB-IS1Si823H2CB-IS1Si823H3AB-IS1Si823H3BB-IS1Si823H3CB-IS1Si823H4AB-IS1Si823H4BB-IS1Si823H4CB-IS1Si823H5AB-IS1Si823H5BB-IS1Si823H5CB-IS1Si823H6AB-IS1Si823H6BB-IS1Si823H6CB-IS1Si823H7AB-IS1Si823H7BB-IS1Si823H7CB-IS1Si823H8AB-IS1Si823H8BB-IS1Si823H8CB-IS1Si823H9AD-IS4Si823H9BD-IS4Si823H9CD-IS4Si823H1AB-IM1Si823H1BB-IM1Si823H1CB-IM1Si823H3AB-IM1Si823H3BB-IM1Si823H3CB-IM1Si823H5AB-IM1Si823H5BB-IM1Si823H5CB-IM1Si823H6AB-IM1Si823H6BB-IM1Si823H6CB-IM1Si823H8AB-IM1Si823H8BB-IM1Si823H8CB-IM1Si823H1AD-IS3Si823H1BD-IS3Si823H1CD-IS3Si823H2AD-IS3Si823H2BD-IS3Si823H2CD-IS3Si823H3AD-IS3Si823H3BD-IS3Si823H3CD-IS3Si823H4AD-IS3Si823H4BD-IS3Si823H4CD-IS3Si823H5AD-IS3Si823H5BD-IS3Si823H5CD-IS3Si823H6AD-IS3Si823H6BD-IS3Si823H6CD-IS3Si823H7AD-IS3Si823H7BD-IS3Si823H7CD-IS3Si823H8AD-IS3Si823H8BD-IS3Si823H8CD-IS3Si823H8AB-AM1Si823H1BD-AS3Si823H9Si823H4Si823H8Si823H2Si823H1Si823H3Si823H6Si823H5Si823H7Si823H9xSi823H3x

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4.0 A Symmetric Drive ISODrivers with Low Propagation Delay and High Transient Immunity

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On-board chargers ]Battery management systems ]Charging stations ]Traction inverters ]Hybrid Electric Vehicles ]Battery Electric Vehicles ]Power delivery systems ]Motor control systems ]Isolated dc-dc power supplies ]Lighting control systems ]Solar and industrial inverters ]

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Datasheet

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CQC(GB4943.1-2011) 、 CSA 、 CSA(232873) 、 CSA(IEC 60950-1) 、 CSA(IEC 62368-1) 、 ESD(CDM, 0.5kV) 、 ESD(HBM, 4kV) 、 ROHS 、 UL 1577 、 UL(E257455) 、 VDE( EN 60950-1) 、 VDE( EN 62368-1) 、 VDE(40037519) 、 VDE(VDE 0884-10)

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Please see the document for details

Industrial 、 Automotive

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AEC-Q100 、 CAMDS 、 IMDS 、 PPAP

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SOIC-16 NB;SOIC-14;QFN-14;SSO-8;SOIC-8;SOIC-16;SOIC-14 WB

English Chinese Chinese and English Japanese

13 June 2019

Rev. 0.5

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