UJ4C075060K4S 750V-58mΩ SiC FET DATA SHEET
Features:
●On-resistance R-DS(on): 58mΩ (typ)
●Operating temperature: 175°C (max)
●Excellent reverse recovery: Q-rr = 52nC
●Low body diode V-FSD: 1.31V
●Low gate charge: Q-G = 37.8nC
●Threshold voltage V-G(th): 4.8V (typ) allowing 0 to 15V drive
●Low intrinsic capacitance
●ESD protected, HBM class 2
[ EV charging ][ PV inverters ][ Switch mode power supplies ][ Power factor correction modules ][ Motor drives ][ Induction heating ] |
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Datasheet |
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Please see the document for details |
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TO-247-4L |
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English Chinese Chinese and English Japanese |
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October 2020 |
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Rev. A |
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1.2 MB |
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