PCDP05120G1 Silicon Carbide Schottky Barrier Diode
●Temperature Independent Switching Behavior
●High Surge Current Capability
●Positive Temperature Coefficient on V-F
●Low Conduction Loss
●Zero Reverse Recovery
●High junction temperature 175°C
●Lead free in compliance with EU RoHS 2.0
●Green molding compound as per IEC 61249 standard
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[ PFC ][ UPS ][ PV Inverter ][ EV Charging Station ][ Welder ] |
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Datasheet |
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Please see the document for details |
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TO-220AC |
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English Chinese Chinese and English Japanese |
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November 9,2020 |
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REV.00 |
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2.2 MB |
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