UJ3C065080T3S 650V-80mΩ SiC FET DATASHEET

2020-06-24
This SiC FET device is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-220-3L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads , and any application requiring standard gate drive.

UnitedSiC

UJ3C065080T3SUJ3D06510TS

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Part#

650V-80mW SiC FET

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EV charging ]PV inverters ]Switch mode power supplies ]Power factor correction modules ]Motor drives ]Induction heating ]

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Datasheet

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ESD(HBM,class 2) 、 Halogen Free 、 Pb Free 、 ROHS

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Please see the document for details

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TO-220-3L

English Chinese Chinese and English Japanese

December 2019

Rev. D

806 KB

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