650V SiC thinQ!™ Generation 5 Diodes Improved Efficiency and Price Performance

2019-08-15
ThinQ!™ Generation 5 represents Infineon’s leading edge technology for SiC Schottky
Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced
with G3, is now combined with a new, more compact design and thin wafer technology.
The result is a new family of products showing improved efficiency over all load
conditions, coming from both the improved thermal characteristics and a lower figure
of merit (Qc
x VF
).
The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™
families, this ensures meeting the most stringent application requirements in this
voltage range.

Infineon

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Diodes

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Telecom / Server ]Solar / UPS ]PC Silverbox ]LED / LCD TV ]Motor Drives ]HID lighting ]

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English Chinese Chinese and English Japanese

03/2014

B152-H9677-G2-X-7600-DB2014-0006

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