X-band HPA GaN Monolithic Microwave IC Advanced Information
●UMS develops a three stage GaN high power amplifier in the frequency band 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 37% of power added efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.5A (quiescent current).
●This circuit is a very versatile amplifier for high performance systems.
●The circuit is dedicated to defence applications and also well suited for a wide range of microwave applications and systems.
●It is developed on a robust 0.25μm gate length GaN HEMT process and is available as a bare die.
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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06 Dec 19 |
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AI1908;AI19029340 |
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424 KB |
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