8W 5.5-7.5GHz HPA GaN Monolithic Microwave IC Advanced Information
UMS has developed a packaged 8W AB class 5.5-7.5GHz High Power Amplifier. The device
is a 2 stage amplifier typically exhibiting a small signal gain of 18dB with 39dBm output
power at 4dB compression
The design is linearity oriented and so the device is compatible with digital baseband
linearization techniques.
The circuit is dedicated to Point to Point telecommunication systems and is also well suited
for a wide range of commercial applications.
It is developed on a robust 0.25µm gate length GaN pHEMT process. It is available in a
standard surface mount 36 leads QFN6x5 package compliant with the Restriction of
Hazardous Substances (RoHS) European Union directive 2011/65/EC and REACh
N°1907/2006..
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Datasheet |
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Lead Free 、 REACh 、 RoHS |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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20 Nov17 |
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AI1711;AI17117324 |
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820 KB |
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