X-band HPA GaN Monolithic Microwave IC Advanced Information
●UMS develops atwo stage GaNhigh power amplifier in the frequency band 8.5-10.5GHz. The HPA provides typically 28W of output power associated to 40% of power added efficiency. The small signal gain exhibits 30dB. The overall power supply is of 30V/0.75A(quiescent current).
●This circuit is a very versatile amplifierfor high performance systems.
●The circuitis dedicated to defence applicationsand also well suited for a wide range of microwave applications and systems.
●It is developed on a robust 0.25μm gate length GaN pHEMT processandis available as a bare die.
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
20,Sep,16 |
|
|
|
|
|
AI15116264;AI1511 |
|
|
487 KB |
- +1 Like
- Add to Favorites
Recommend
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
