6GHz-18GHz Reflective SPDT GaN Monolithic Microwave IC Advanced Information
●UMS developed a monolithic FET based reflective switch operating in the frequency band 6GHz to 18GHz. Typically, the insertion losses are better than 1.5dB, the isolation is higher than 30dB and the input power at 1dB gain compression is higher than 42dBm.
●This circuit is well suited for a wide range of microwave applications and systems. It is developed on a robust 0.25μm gate length GaN pHEMT process and is available as a bare die.
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monolithic FET based reflective switch 、 GaN Monolithic Microwave IC |
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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21,Nov,16 |
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AI16116326;AI1611 |
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693 KB |
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