55NF06 N-CHANNEL POWER MOSFET TRANSISTOR
◆DESCRIPTION
■Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A,fast switching speed.Low on-state resistance,breakdown voltage rating of 60V,and max threshold voltages of 4 volt.
■It is mainly suitable electronic ballast,and low power switching mode power appliances.
◆FEATURES
■RDS(ON)=23mΩ @VGS=10 V
■Ultra low gate charge （typical 30 nC）
■Low reverse transfer capacitance (CRSS typical 80 pF)
■Fast switching capability
■100% avalanche energy specified
■Improved dv/dt capability
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[ Auotmobile Convert System ][ Networking DC-DC Power System ][ Power Supply ] |
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Datasheet |
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Please see the document for details |
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TO-251;IPAK;TO-220;TO-220F;TO-252;DPAK |
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English Chinese Chinese and English Japanese |
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2019/10/12 |
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389 KB |
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