P5N50C 5 Ampere 500 Volt N-Channel MOSFET DATA SHEET
●Features
■RDS(on) (Max 1.5 Ω)@VGS=10V
■Gate Charge(Typical 18.5nC)
■Improved dv/dt Capability
■High ruggednes
■100% Avalanche Tested
●General Description
■This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technol-ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
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Datasheet |
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Please see the document for details |
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TO-220 |
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English Chinese Chinese and English Japanese |
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2019/10/12 |
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992 KB |
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