P5N50C 5 Ampere 500 Volt N-Channel MOSFET DATA SHEET

2022-08-04

●Features
■RDS(on) (Max 1.5 Ω)@VGS=10V
■Gate Charge(Typical 18.5nC)
■Improved dv/dt Capability
■High ruggednes
■100% Avalanche Tested
●General Description
■This N-channel enhancement mode field-effect power transistor using Thinki Semiconductor's advanced planar stripe, DMOS technol-ogy intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 package is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .

THINKISEMI

P5N50C

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N-Channel MOSFET

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Datasheet

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TO-220

English Chinese Chinese and English Japanese

2019/10/12

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