GH15 GaN TECHNOLOGY
GH15 GaN process is optimized up to 35GHz for high power, high PAE and high linearity.
The Gallium Nitride power density combined with a thermal dissipative SiC substrate brings to 3.5W/mm at 30GHz. This MMIC process includes MIM capacitors, inductors, air bridges, metallic resistors, via through the substrate and two metal layers for interconnections.
GH15 is the ideal process to design:
• High power and high PAE amplifiers up to Ka-band.
• Robust LNA.
• High Power switches.
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[ Pt to Pt radio ][ 5G ][ Satcom ][ Radar ][ Broadband amplification ][ Hi-Rel products ] |
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Supplier and Product Introduction |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019 |
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1.1 MB |
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