Switching Characteristics of UnitedSiC Gen 3 SiC FETs at Elevated Temperatures APPLICATION NOTE
One unique characteristic of United SiC Gen 3 SiC FETs is that its switching losses and Qrr decrease at elevated temperature, making the device more efficient once it heats up. This paper explains in detail the reason behind this characteristic
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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July 2019 |
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AN0022 |
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334 KB |
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