SPICE Device Model SUD50N06-09L N-Channel 60 V (D-S) 175 °C MOSFET, Logic Level
●DESCRIPTION:
■The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C to 125 °C temperature ranges under the pulsed 0 V to 10 V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
■A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched C-gd model. All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
●CHARACTERISTICS:
■N-Channel Vertical DMOS
■Macro Model (Subcircuit Model)
■Level 3 MOS
■Apply for both Linear and Switching Application
■Accurate over the -55 °C to +125 °C Temperature Range
■Model the Gate Charge
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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25-Mar-13 |
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Rev. C |
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70117 |
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267 KB |
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