Alliance Memory Introduced High-Speed CMOS Synchronous DRAM AS4C1M16S With Low 16-Mb Density in 50-Pin TSOP II Package
SAN CARLOS, Calif. — Feb. 27, 2013 — Alliance Memory introduced a high-speed CMOS synchronous DRAM (SDRAM) with a low density of 16Mb in a 50-pin, 400-mil plastic TSOP II package. The AS4C1M16S offers a fast access time from a clock of 5.4 ns at a 7-ns clock cycle and a fast clock rate of 143MHz.
The device released is optimized for medical, industrial, automotive, and telecom applications requiring high memory bandwidth, and is particularly well-suited to high-performance PC applications. Internally configured as dual banks of 512K word x 16 bits with a synchronous interface, the SDRAM operates from a single +3.3-V (±0.3V) power supply and is lead (Pb) and halogen-free.
The AS4C1M16S provides programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge function provides a self-timed row precharge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
Alliance Memory’s legacy ICs provide reliable drop-in, pin-for-pin-compatible replacements for a number of similar solutions. The AS4C1M16S is the latest in the company’s full line of high-speed SDRAMs, which now includes devices with densities of 16Mb, 64Mb, 128Mb, and 256Mb.
Samples and production quantities of the AS4C1M16S are available now, with lead times of six weeks for large orders.
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