Alliance Memory Introduced High-Speed CMOS DDR2 Synchronous DRAMs With 2-Gb Density in 84-Ball FBGA Package
SAN CARLOS, Calif. — June 25, 2015 — Alliance Memory broadened its lineup of high-speed CMOS double data rate 2 synchronous DRAMs (High-Speed CMOS DDR2 Synchronous DRAMs) with a device featuring high 2-Gb density in the 84-ball 8-mm by 12.5-mm by 1.2-mm FBGA package. Available from a very limited number of suppliers, the AS4C128M16D2 is offered in commercial (0℃ to +85℃) and industrial (-40℃ to + 95℃) temperature ranges.
Hard to find until now, the AS4C128M16D2 provides a reliable drop-in, pin-for-pin-compatible replacement for a number of similar solutions in automotive, industrial, consumer, networking, and medical products requiring high memory bandwidth. The device is internally configured as eight banks of 16M x 16 bits. The DDR2 SDRAM offers a synchronous interface, operates from a single + 1.8-V (± 0.1V) power supply, and is RoHS-compliant.
The AS4C128M16D2 features a fast clock rate of 400MHz and a data rate of 800Mbps/pin. The DDR2 SDRAM provides programmable read or write burst lengths of 4 or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
With the addition of the AS4C128M16D2, Alliance Memory now offers an extensive lineup of DDR2 SDRAMs featuring densities of 512 Mb, 1Gb, and 2Gb.
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