Alliance Memory Introduced High-Speed CMOS Double Data Rate Synchronous DRAMs With 64-, 128-, 256-, and 512-Mb Densities in 66-pin TSOP II Packages
SAN CARLOS, Calif. — Sept. 18, 2013 — Alliance Memory introduced a line of high-speed CMOS double data rate synchronous DRAMs (DDR1 SDRAM) with densities of 64Mb (AS4C4M16D1), 128Mb (AS4C8M16D1), 256Mb (AS4C16M16D1), and 512Mb (AS4C32M16D1).
The devices released provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in medical, communications, industrial, and consumer products requiring high memory bandwidth, and are particularly well-suited to high-performance PC applications. Internally configured as four banks of 1M, 2M, 4M, or 8M word x 16 bits with a synchronous interface, the DDR1 SDRAMs operate from a single +2.5-V (± 0.2 V) power supply and are lead (Pb) and halogen-free.
The AS4C4M16D1, AS4C8M16D1, AS4C16M16D1, and AS4C32M16D1 feature a fast clock rate of 200MHz, a commercial temperature range of 0℃ to 70℃, and are offered in the 66-pin TSOP II package with a 0.65-mm pin pitch. The DDR1 SDRAMs provide programmable read or write burst lengths of 2, 4, or 8. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh, while a programmable mode register allows the system to choose the most suitable modes to maximize performance.
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