CHA8054-99F GaN X-band High Power Amplifier Optimized for Space Applications , Operating Between 7.7 and 8.6GHz

2023-09-02 UMS News
High Power Amplifier,CHA8054-99F,UMS

The CHA8054-99F is a new GaN X-band High Power Amplifier operating between 7.7 and 8.6GHz.

This circuit, optimized for space applications, is designed to obtain an excellent PAE of 50% and a typical high saturated output power of 23W @28V drain supply voltage. It exhibits a typical 27dB linear gain.

 

The CHA8054-99F is realised on UMS space evaluated 0.25µm GaN proprietary technology.

Main Features:

  • Frequency range: 7.7-8.6GHz

  • High output power: 23W

  • High PAE: 50%

  • Linear Gain: 27dB

  • DC bias: Vd=28Volt @ Idq=0.9A

  • Chip size 5.14x4.22x0.1mm

  • Available in bare die

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